 |  | | |
| PartNumber | NTMS10P02R2G | NTMS10P02 | NTMS10P02R |
| Description | MOSFET 20V 10A P-Channel | ||
| Manufacturer | ON Semiconductor | ON | ON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOIC-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 8.8 A | - | - |
| Rds On Drain Source Resistance | 20 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 2.5 V | - | - |
| Qg Gate Charge | 48 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Series | NTMS10P02 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 110 ns, 125 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns, 100 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns, 110 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NTMS10P02R2G | MOSFET 20V 10A P-Channel | ||
| NTMS10P02 | New and Original | ||
| NTMS10P02R | New and Original | ||
| NTMS10P02R2SG | New and Original | ||
| NTMS10P02R2G-CUT TAPE | New and Original | ||
ON Semiconductor |
NTMS10P02R2 | MOSFET 20V 10A P-Channel | |
| NTMS10P02R2 | MOSFET P-CH 20V 8.8A 8-SOIC | ||
| NTMS10P02R2G | MOSFET P-CH 20V 8.8A 8-SOIC |