 |  | | |
| PartNumber | NTZS3151PT1G | NTZS3151P | NTZS3151PT1 |
| Description | MOSFET -20V -950mA P-Channel | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 950 mA | - | - |
| Rds On Drain Source Resistance | 195 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 170 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTZS3151P | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23.7 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NTZS3151PT1G | MOSFET -20V -950mA P-Channel | ||
| NTZS3151PT1H | MOSFET PFET SOT563 20V 950MA TR | ||
| NTZS3151P | New and Original | ||
| NTZS3151PT1 | New and Original | ||
| NTZS3151PT1G/TXX | New and Original | ||
| NTZS3151PT1GOSTR-ND | New and Original | ||
| NTZS315PT1G | New and Original | ||
| NTZS3151PT1G-CUT TAPE | New and Original | ||
ON Semiconductor |
NTZS3151PT1G | MOSFET P-CH 20V 0.86A SOT-563 | |
| NTZS3151PT5G | MOSFET P-CH 20V 0.86A SOT-563 | ||
| NTZS3151PT1H | IGBT Transistors MOSFET PFET SOT563 20V 950MA TR |