NVD5802

NVD5802NT4G vs NVD5802NT4G-TB01 vs NVD5802NT4G-VF01

 
PartNumberNVD5802NT4GNVD5802NT4G-TB01NVD5802NT4G-VF01
DescriptionMOSFET DPAK 3W SMT PBFMOSFET NFET DPAK 40V 110A 6.5MOHTrans MOSFET N-CH 40V 101A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD5802NT4G-VF01)
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current101 A101 A-
Rds On Drain Source Resistance4.4 mOhms4.4 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge75 nC75 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation93.75 W93.75 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
SeriesNTD5802NNTD5802N-
Transistor Type1 N-Channel Power MOSFET1 N-Channel Power MOSFET-
BrandON SemiconductorON Semiconductor-
Fall Time8.5 ns8.5 ns-
Product TypeMOSFETMOSFET-
Rise Time52 ns52 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time39 ns39 ns-
Typical Turn On Delay Time14 ns14 ns-
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
NVD5802NT4G MOSFET DPAK 3W SMT PBF
NVD5802NT4G-VF01 Trans MOSFET N-CH 40V 101A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD5802NT4G-VF01)
ON Semiconductor
ON Semiconductor
NVD5802NT4G-TB01 MOSFET NFET DPAK 40V 110A 6.5MOH
NVD5802NT4G-TB01 MOSFET N-CH 40V 101A DPAK
NVD5802NT4G RF Bipolar Transistors MOSFET DPAK 3W SMT PBF
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