| PartNumber | NVMFS5C430NWFT1G | NVMFS5C430NWFAFT1G | NVMFS5C430NWFAFT3G |
| Description | MOSFET T6-D3F 40V NFET | MOSFET T6 40V NCH LL IN SO8FL | MOSFET T6 40V NCH LL IN SO8FL |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-FL-8 | SO-FL-8 | SO-FL-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 185 A | 185 A | 185 A |
| Rds On Drain Source Resistance | 1.4 mOhms | 1.4 mOhms | 1.4 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 10 V |
| Qg Gate Charge | 47 nC | 47 nC | 47 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 106 W | 106 W, 3.8 W | 106 W, 3.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 130 S | 130 S | 130 S |
| Fall Time | 8 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 48 ns | 48 ns | 48 ns |
| Factory Pack Quantity | 1500 | 1500 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 29 ns | 29 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns | 13 ns |
| Unit Weight | 0.003781 oz | - | - |