 |  | | |
| PartNumber | PHB21N06LT,118 | PHB21N06LT /T3 | PHB21N06LT |
| Description | MOSFET TAPE13 PWR-MOS | MOSFET TAPE13 PWR-MOS | |
| Manufacturer | Nexperia | - | NXP |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 19 A | - | - |
| Rds On Drain Source Resistance | 70 mOhms | - | - |
| Vgs Gate Source Voltage | 15 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 56 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 88 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Part # Aliases | /T3 PHB21N06LT | - | - |
| Unit Weight | 0.077603 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PHB21N06LT,118 | MOSFET TAPE13 PWR-MOS | |
| PHB21N06LT,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| PHB21N06LT /T3 | MOSFET TAPE13 PWR-MOS | ||
| PHB21N06LT | New and Original | ||
| PHB21N06LT118 | Now Nexperia PHB21N06LT - Power Field-Effect Transistor, 19A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK |