PMBT6429

PMBT6429,215 vs PMBT6429 vs PMBT6429 215

 
PartNumberPMBT6429,215PMBT6429PMBT6429 215
DescriptionBipolar Transistors - BJT TRANS SW TAPE-7100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236ABTransistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:45V, Transition Frequency ft:700MHz, Power Dissipation Pd:250mW, DC Collector Current:100mA, DC Current Gain hFE:500hFE, No. of Pins:3
ManufacturerNexperiaNXP-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO55 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT700 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max500 at 100 uA, 5 V--
Height1 mm--
Length3 mm--
PackagingReel--
Width1.4 mm--
BrandNexperia--
DC Collector/Base Gain hfe Min500 at 100 uA, 5 V, 500 at 1 mA, 5 V, 500 at 10 mA, 5 V--
Pd Power Dissipation250 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesPMBT6429 T/R--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PMBT6429,215 Bipolar Transistors - BJT TRANS SW TAPE-7
PMBT6429,215 Bipolar Transistors - BJT TRANS SW TAPE-7
PMBT6429 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PMBT6429215 Now Nexperia PMBT6429 - Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PMBT6429 215 Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:45V, Transition Frequency ft:700MHz, Power Dissipation Pd:250mW, DC Collector Current:100mA, DC Current Gain hFE:500hFE, No. of Pins:3
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