PSMN005-75P

PSMN005-75P,127 vs PSMN005-75P+127 vs PSMN005-75P.

 
PartNumberPSMN005-75P,127PSMN005-75P+127PSMN005-75P.
DescriptionMOSFET N-chan TrenchMOS SiliconMAX FET
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation230 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.4 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandNexperia--
Fall Time74 ns--
Product TypeMOSFET--
Rise Time73 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time144 ns--
Typical Turn On Delay Time37 ns--
Part # AliasesPSMN005-75P--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN005-75P,127 MOSFET N-chan TrenchMOS SiliconMAX FET
PSMN005-75P,127 RF Bipolar Transistors MOSFET N-chan TrenchMOS SiliconMAX FET
PSMN005-75P+127 New and Original
PSMN005-75P. New and Original
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