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| PartNumber | RDD022N60TL | RDD022N60 | RDD022N60 TL |
| Description | MOSFET 10V DRIVE N-Ch MOSFET | Power Field-Effect Transistor, 2A I(D), 600V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 5.2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 51 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | RDD022N60 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 500 mS | - | - |
| Fall Time | 53 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | RDD022N60 | - | - |
| Unit Weight | 0.011993 oz | - | - |