| PartNumber | RM12N40S8-T | RM12N650T1 | RM12N500T2 |
| Description | MOSFET SOP-8 MOSFET | MOSFET TO-220F MOSFET | MOSFET TO-220 MOSFET |
| Manufacturer | Rectron | Rectron | Rectron |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Packaging | Reel | Tube | Tube |
| Brand | Rectron | Rectron | Rectron |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Mounting Style | - | Through Hole | Through Hole |
| Package / Case | - | TO-220F-3 | TO-220-3 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 650 V | 500 V |
| Id Continuous Drain Current | - | 11.5 A | 12 A |
| Rds On Drain Source Resistance | - | 360 mOhms | 520 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Qg Gate Charge | - | 19 nC | 30 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 32.6 W | 101 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 9 ns | 5 ns |
| Rise Time | - | 8 ns | 5 ns |
| Typical Turn Off Delay Time | - | 58 ns | 55 ns |
| Typical Turn On Delay Time | - | 11 ns | 11 ns |
| Forward Transconductance Min | - | - | 8 S |