RN1104MF

RN1104MFV,L3F vs RN1104MFV(TL3,T) vs RN1104MFV(TPL3)

 
PartNumberRN1104MFV,L3FRN1104MFV(TL3,T)RN1104MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased 150mW TRANSISTORBipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 150mA PCBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYY
ConfigurationSingle-Single
Transistor PolarityNPN-NPN
Typical Input Resistor47 kOhms-47 kOhms
Typical Resistor Ratio0.8-1
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-723-3--
DC Collector/Base Gain hfe Min80-80
Collector Emitter Voltage VCEO Max50 V-50 V
Continuous Collector Current100 mA-100 mA
Pd Power Dissipation150 mW-150 mW
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesRN1104MFVRN1104MFVRN1104MFV
PackagingReelReelReel
Emitter Base Voltage VEBO10 V--
BrandToshibaToshibaToshiba
Number of Channels1 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity800080008000
SubcategoryTransistorsTransistorsTransistors
Peak DC Collector Current--100 mA
DC Current Gain hFE Max--80
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN1104MFV,L3F Bipolar Transistors - Pre-Biased 150mW TRANSISTOR
RN1104MFV(TL3,T) Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 150mA PC
RN1104MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
RN1104MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
RN1104MFV(TL3,T) Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 150mA PC
RN1104MFV,L3F Bipolar Transistors - Pre-Biased 150mW TRANSISTOR
RN1104MFVL3FCT-ND New and Original
RN1104MFVL3FDKR-ND New and Original
RN1104MFVL3FTR-ND New and Original
RN1104MF New and Original
RN1104MFV New and Original
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