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| PartNumber | RN1104MFV,L3F | RN1104MFV(TL3,T) | RN1104MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased 150mW TRANSISTOR | Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 150mA PC | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Configuration | Single | - | Single |
| Transistor Polarity | NPN | - | NPN |
| Typical Input Resistor | 47 kOhms | - | 47 kOhms |
| Typical Resistor Ratio | 0.8 | - | 1 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | 80 |
| Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
| Continuous Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 150 mW | - | 150 mW |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | RN1104MFV | RN1104MFV | RN1104MFV |
| Packaging | Reel | Reel | Reel |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Brand | Toshiba | Toshiba | Toshiba |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 8000 | 8000 |
| Subcategory | Transistors | Transistors | Transistors |
| Peak DC Collector Current | - | - | 100 mA |
| DC Current Gain hFE Max | - | - | 80 |