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| PartNumber | RN1902T5LFT | RN1902T5LFTCT-ND | RN1902T5LFTDKR-ND |
| Description | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| Manufacturer | Toshiba Semiconductor and Storage | - | - |
| Product Category | Transistors (BJT) - Arrays, Pre-Biased | - | - |
| Series | - | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 6-TSSOP, SC-88, SOT-363 | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | US6 | - | - |
| Configuration | Dual | - | - |
| Power Max | 200mW | - | - |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | - | - |
| Current Collector Ic Max | 100mA | - | - |
| Voltage Collector Emitter Breakdown Max | 50V | - | - |
| Resistor Base R1 Ohms | 10k | - | - |
| Resistor Emitter Base R2 Ohms | 10k | - | - |
| DC Current Gain hFE Min Ic Vce | 50 @ 10mA, 5V | - | - |
| Vce Saturation Max Ib Ic | 300mV @ 250μA, 5mA | - | - |
| Current Collector Cutoff Max | 100nA (ICBO) | - | - |
| Frequency Transition | 250MHz | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Transistor Polarity | NPN | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector Base Gain hfe Min | 50 | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |