RN4989

RN4989(T5L,F,T) vs RN4989 vs RN4989(T5LFT)CT-ND

 
PartNumberRN4989(T5L,F,T)RN4989RN4989(T5LFT)CT-ND
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 6Pin 47K x 22Kohms
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual--
Transistor PolarityNPN, PNP--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio2.14--
Mounting StyleSMD/SMT--
Package / CaseUS-6--
DC Collector/Base Gain hfe Min70, 70--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation200 mW--
Maximum Operating Temperature+ 150 C--
SeriesRN4989--
PackagingReelDigi-ReelR Alternate Packaging-
DC Current Gain hFE Max70--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandToshiba--
Number of Channels2 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Package Case-6-TSSOP, SC-88, SOT-363-
Mounting Type-Surface Mount-
Supplier Device Package-US6-
Power Max-200mW-
Transistor Type-1 NPN, 1 PNP - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-47k-
Resistor Emitter Base R2 Ohms-22k-
DC Current Gain hFE Min Ic Vce-70 @ 10mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 250μA, 5mA-
Current Collector Cutoff Max-100μA (ICBO)-
Frequency Transition-250MHz, 200MHz-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN4989(T5L,F,T) Bipolar Transistors - Pre-Biased 100mA 50volts 6Pin 47K x 22Kohms
RN4989FS(TPL3) Bipolar Transistors - Pre-Biased 47K x 22Kohms Polarity=NPN+PNP
RN4989(T5L,F,T) Bipolar Transistors - Pre-Biased 100mA 50volts 6Pin 47K x 22Kohms
RN4989 New and Original
RN4989FET5LFT New and Original
RN4989(T5LFT)CT-ND New and Original
RN4989(T5LFT)DKR-ND New and Original
RN4989(T5LFT)TR-ND New and Original
RN4989FE New and Original
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