 |  | | |
| PartNumber | RQ5A030APTL | RQ5A030AP | RQ5A030AP TL |
| Description | MOSFET Pch -12V -3A Middle Power MOSFET | ||
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-346-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 180 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 16 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | 1 P-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 0.95 mm | - | - |
| Length | 3 mm | - | - |
| Product | MOSFET | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Type | Power MOSFET | - | - |
| Width | 1.8 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 3.5 S | - | - |
| Fall Time | 60 ns | 60 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | 40 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 160 ns | 160 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | RQ5A030AP | - | - |
| Unit Weight | 0.000423 oz | - | - |
| Series | - | RQ5A030AP | - |
| Package Case | - | SOT-346-3 | - |
| Pd Power Dissipation | - | 1 W | - |
| Vgs Gate Source Voltage | - | 0 V to - 8 V | - |
| Id Continuous Drain Current | - | 3 A | - |
| Vds Drain Source Breakdown Voltage | - | - 12 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 300 mV | - |
| Rds On Drain Source Resistance | - | 180 mOhms | - |
| Qg Gate Charge | - | 16 nC | - |
| Forward Transconductance Min | - | 3.5 S | - |