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| PartNumber | RW1E025RPT2CR |
| Description | MOSFET 4V Drive Pch MOSFET Drive Pch |
| Manufacturer | ROHM Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-563T-6 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V |
| Id Continuous Drain Current | 2.5 A |
| Rds On Drain Source Resistance | 55 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V |
| Vgs Gate Source Voltage | 20 V |
| Qg Gate Charge | 5.2 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 700 mW |
| Configuration | Single |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Series | RW1E025RP |
| Transistor Type | 1 P-Channel |
| Brand | ROHM Semiconductor |
| Fall Time | 22 ns |
| Product Type | MOSFET |
| Rise Time | 12 ns |
| Factory Pack Quantity | 8000 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 50 ns |
| Typical Turn On Delay Time | 7 ns |
| Part # Aliases | RW1E025RP |
| Unit Weight | 0.000106 oz |