 | | | |
| PartNumber | SBCX19LT1G | SBCX | SBCX19LT1 |
| Description | Bipolar Transistors - Pre-Biased SS GP XSTR PNP 45V | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | PNP | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| DC Collector/Base Gain hfe Min | 100 | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Continuous Collector Current | 0.5 A | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCX19L | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Height | 1.01 mm | - | - |
| Length | 2.9 mm | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| SBCX19LT1G | Bipolar Transistors - Pre-Biased SS GP XSTR PNP 45V | ||
| SBCX | New and Original | ||
| SBCX19LT1 | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | ||
ON Semiconductor |
SBCX19LT1G | Bipolar Transistors - Pre-Biased SS GP XSTR PNP 45V |