 |  | |
| PartNumber | SCT20N120H | SCT20N170 |
| Description | MOSFET | |
| Manufacturer | STMicroelectronics | - |
| Product Category | MOSFET | - |
| Technology | SiC | - |
| Mounting Style | Through Hole | - |
| Package / Case | HiP247-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - |
| Id Continuous Drain Current | 20 A | - |
| Rds On Drain Source Resistance | 239 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | - 10 V, 25 V | - |
| Qg Gate Charge | 45 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 200 C | - |
| Pd Power Dissipation | 175 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Transistor Type | 1 N-Channel | - |
| Brand | STMicroelectronics | - |
| Fall Time | 17 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 16 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | - |
| Typical Turn On Delay Time | 10 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
SCT20N120H | MOSFET | |
| SCT20N170 | New and Original |