 |  |  | |
| PartNumber | SCT20N120 | SCT20N120H | SCT20N170 |
| Description | MOSFET 1200V silicon carbide MOSFET | MOSFET | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | SiC | SiC | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | HiP-247-3 | HiP247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 1200 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 239 mOhms | 239 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - 10 V, 25 V | - |
| Qg Gate Charge | 45 nC | 45 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| Pd Power Dissipation | 175 W | 175 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiP247â?¢ | - | - |
| Packaging | Tube | - | - |
| Series | SCT20N120 | - | - |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 17 ns | 17 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | 16 ns | - |
| Factory Pack Quantity | 600 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | 27 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Unit Weight | 1.340411 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
SCT20N120 | MOSFET 1200V silicon carbide MOSFET | |
| SCT20N120H | MOSFET | ||
| SCT20N120 | MOSFET N-CH 1200V 20A HIP247 | ||
| SCT20N170 | New and Original |