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| PartNumber | SCT2160KEC | SCT2160KE | SCT2160KECU |
| Description | MOSFET 1200V20A160mOhm Silicon Carbide SiC | ||
| Manufacturer | ROHM Semiconductor | Rohm Semiconductor | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | SiC | SiC | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Id Continuous Drain Current | 22 A | - | - |
| Rds On Drain Source Resistance | 160 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
| Qg Gate Charge | 62 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 165 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Series | SCT2x | SCT2160KE | - |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 2.4 S | - | - |
| Fall Time | 27 ns | 27 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | 25 ns | - |
| Factory Pack Quantity | 360 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 67 ns | 67 ns | - |
| Typical Turn On Delay Time | 23 ns | 23 ns | - |
| Part # Aliases | SCT2160KE | - | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Package Case | - | TO-247-3 | - |
| Operating Temperature | - | 175°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-247 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 165W | - |
| Drain to Source Voltage Vdss | - | 1200V (1.2kV) | - |
| Input Capacitance Ciss Vds | - | 1200pF @ 800V | - |
| FET Feature | - | Silicon Carbide (SiC) | - |
| Current Continuous Drain Id 25°C | - | 22A (Tc) | - |
| Rds On Max Id Vgs | - | 208 mOhm @ 7A, 18V | - |
| Vgs th Max Id | - | 4V @ 2.5mA | - |
| Gate Charge Qg Vgs | - | 62nC @ 18V | - |
| Pd Power Dissipation | - | 165 W | - |
| Id Continuous Drain Current | - | 22 A | - |
| Vds Drain Source Breakdown Voltage | - | 1200 V | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Rds On Drain Source Resistance | - | 160 mOhms | - |
| Qg Gate Charge | - | 62 nC | - |
| Forward Transconductance Min | - | 2.4 S | - |