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| PartNumber | SCTW90N65G2V | SCTWA10N120 | SCTWA20N120 |
| Description | MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package | MOSFET | MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | SiC | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | HIP247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 25 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.9 V | - | - |
| Vgs Gate Source Voltage | 10 V to 22 V | - | - |
| Qg Gate Charge | 157 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Pd Power Dissipation | 390 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | SCTW90N | SCTWA10N120 | SCTWA20N120 |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 38 ns | - | - |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 58 ns | - | - |
| Typical Turn On Delay Time | 26 ns | - | - |