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SEMIX453GB1

SEMIX453GB12E4 vs SEMIX453GB12E4P vs SEMIX453GB12E4S

 
PartNumberSEMIX453GB12E4SEMIX453GB12E4PSEMIX453GB12E4S
DescriptionIGBT, MODULE, 1.2KV, 683A, SEMIX 3S, Transistor Polarity:Dual N Channel, DC Collector Current:683A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Vo
Manufacturer Part # Description RFQ
SEMIX453GB12E4 New and Original
SEMIX453GB12E4P New and Original
SEMIX453GB12E4S IGBT, MODULE, 1.2KV, 683A, SEMIX 3S, Transistor Polarity:Dual N Channel, DC Collector Current:683A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Vo
SEMIX453GB12T4S Insulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel
SEMIX453GB12VS New and Original
SEMIX453GB176HDS IGBT MODULE, 1.7KV, 444A, SEMIX 3S, Transistor Polarity:N Channel, DC Collector Current:444A, Collector Emitter Saturation Voltage Vce(on):1.7kV, Power Dissipation Pd:-, Collector Emitter Voltage
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