SGP10N60RUFD

SGP10N60RUFDTU vs SGP10N60RUFD vs SGP10N60RUFD,SGP10N60RUF

 
PartNumberSGP10N60RUFDTUSGP10N60RUFDSGP10N60RUFD,SGP10N60RUF
DescriptionIGBT Transistors Dis Short Circuit Rated IGBT
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.2 V2.2 V-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Continuous Collector Current at 25 C16 A16 A-
Pd Power Dissipation75 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSGP10N60RUFD--
PackagingTubeTube-
Continuous Collector Current Ic Max16 A16 A-
Height9.4 mm--
Length10.1 mm--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current16 A--
Gate Emitter Leakage Current+/- 100 nA+/- 100 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSGP10N60RUFDTU_NL--
Unit Weight0.063493 oz0.063493 oz-
Part Aliases-SGP10N60RUFDTU_NL-
Package Case-TO-220-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-3-
Power Max-75W-
Reverse Recovery Time trr-60ns-
Current Collector Ic Max-16A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-30A-
Vce on Max Vge Ic-2.8V @ 15V, 10A-
Switching Energy-141μJ (on), 215μJ (off)-
Gate Charge-30nC-
Td on off 25°C-15ns/36ns-
Test Condition-300V, 10A, 20 Ohm, 15V-
Pd Power Dissipation-75 W-
Collector Emitter Voltage VCEO Max-600 V-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGP10N60RUFDTU IGBT Transistors Dis Short Circuit Rated IGBT
SGP10N60RUFD New and Original
SGP10N60RUFD,SGP10N60RUF New and Original
SGP10N60RUFDTU(SG) New and Original
ON Semiconductor
ON Semiconductor
SGP10N60RUFDTU IGBT Transistors Dis Short Circuit Rated IGBT
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