| PartNumber | SI2374DS-T1-GE3 | SI2392ADS-T1-GE3 | SI2377EDS-T1-GE3 |
| Description | MOSFET 20V Vds 8V Vgs SOT-23 | MOSFET 100V Vds 20V Vgs SOT-23 | MOSFET -20V Vds 8V Vgs SOT-23 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 100 V | 20 V |
| Id Continuous Drain Current | 5.9 A | 3.1 A | 4.4 A |
| Rds On Drain Source Resistance | 30 mOhms | 102 mOhms | 61 mOhms |
| Vgs th Gate Source Threshold Voltage | 400 mV | 1.2 V | 400 mV |
| Vgs Gate Source Voltage | 4.5 V | 20 V | 4.5 V |
| Qg Gate Charge | 20 nC | 10.4 nC | 14 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.7 W | 2.5 W | 1.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | - | 1.45 mm |
| Length | 2.9 mm | - | 2.9 mm |
| Series | SI2 | SI2 | SI2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 P-Channel |
| Width | 1.6 mm | - | 1.6 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 29 S | 5 S | 12 S |
| Fall Time | 10 ns | 20 ns | 2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 23 ns | 68 ns | 1 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | 14 ns | 4 ns |
| Typical Turn On Delay Time | 10 ns | 40 ns | 0.2 ns |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Part # Aliases | - | - | SI2377EDS-GE3 |