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| PartNumber | SI3493BDV-T1-E3 | SI3493BDV-T1-E3-S | SI3493BDV-T1-E3-CUT TAPE |
| Description | MOSFET P-CH 20V 8A 6-TSOP | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | SI3493BDV-E3 | - | - |
| Unit Weight | 0.000705 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SOT-23-6 Thin, TSOT-23-6 | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | 6-TSOP | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET P-Channel, Metal Oxide | - | - |
| Power Max | 2.97W | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 1805pF @ 10V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 8A (Tc) | - | - |
| Rds On Max Id Vgs | 27.5 mOhm @ 7A, 4.5V | - | - |
| Vgs th Max Id | 900mV @ 250μA | - | - |
| Gate Charge Qg Vgs | 43.5nC @ 5V | - | - |
| Pd Power Dissipation | 2.08 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 84 ns | - | - |
| Rise Time | 72 ns | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Id Continuous Drain Current | 7 A | - | - |
| Vds Drain Source Breakdown Voltage | - 20 V | - | - |
| Rds On Drain Source Resistance | 27.5 mOhms | - | - |
| Transistor Polarity | P-Channel | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 22 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay |
SI3493BDV-T1-E3 | MOSFET P-CH 20V 8A 6-TSOP | |
| SI3493BDV-T1-E3-S | New and Original | ||
| SI3493BDV-T1-E3-CUT TAPE | New and Original |