| PartNumber | SI4186DY-T1-GE3 | SI4190ADY-T1-GE3 | SI4176DY-T1-GE3 |
| Description | MOSFET 20V Vds 20V Vgs SO-8 | MOSFET 100V Vds 20V Vgs SO-8 | MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | Y |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI4 | - | SI4 |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4186DY-GE3 | SI4190ADY-GE3 | SI4176DY-GE3 |
| Unit Weight | 0.019048 oz | 0.017870 oz | 0.017870 oz |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SO-8 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 18.4 A | - |
| Rds On Drain Source Resistance | - | 7.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 67 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 6 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 3.9 mm | - |
| Forward Transconductance Min | - | 54 S | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 11 ns | - |
| Typical Turn Off Delay Time | - | 31 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
|
Vishay / Siliconix |
SI4186DY-T1-GE3 | MOSFET 20V Vds 20V Vgs SO-8 | |
| SI4190ADY-T1-GE3 | MOSFET 100V Vds 20V Vgs SO-8 | ||
| SI4196DY-T1-E3 | MOSFET | ||
| SI4176DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3 | ||
|
Silicon Labs |
SI4201-BM | RF Wireless Misc | |
| SI4200-EVB | RF Development Tools | ||
| SI4200-GM | RF Transceiver | ||
| SI4200-BM | IC RF TXRX CELLULAR 32VFQFN | ||
| SI4200-GM | IC RF TXRX CELLULAR 32VFQFN | ||
| SI4200-EVB | BOARD EVAL FOR SI4200 | ||
| SI4201-BM | IC RF TXRX CELLULAR 20VFQFN | ||
Vishay |
SI4176DY-T1-GE3 | IGBT Transistors MOSFET 30V 12A N-CH MOSFET | |
| SI4178DY-T1-E3 | MOSFET N-CH 30V 12A 8SO | ||
| SI4178DY-T1-GE3 | MOSFET N-CH 30V 12A 8-SOIC | ||
| SI4190ADY-T1-GE3 | MOSFET N-CH 100V 18.4A 8SO | ||
| SI4190DY-T1-GE3 | MOSFET N-CH 100V 20A 8-SOIC | ||
| SI4186DY-T1-GE3 | MOSFET N-CH 20V 35.8A 8SOIC | ||
| SI4196DY-T1-GE3 | MOSFET N-CH 20V 8A 8SOIC | ||
| SI4200DY-T1-GE3 | MOSFET 2N-CH 25V 8A 8SOIC | ||
| SI4176DY-T1-E3 | MOSFET N-CH 30V 12A 8SO | ||
| SI4196DY-T1-E3 | MOSFET N-CH 20V 8A 8SOIC | ||
| SI4178 | New and Original | ||
| SI4178BDY | New and Original | ||
| SI4178DY | New and Original | ||
| SI4178DY-T1 | New and Original | ||
| SI4178DY-TI-GE3 | New and Original | ||
| SI4186DY-T1-E3 | New and Original | ||
| SI4188 | New and Original | ||
| SI419 | New and Original | ||
| SI4190ADY | New and Original | ||
| SI4190ADY-T1-E3 | New and Original | ||
| SI4190DY-T1-E3 | New and Original | ||
| SI4178DY-T1-GE3-CUT TAPE | New and Original | ||
| SI4200 | New and Original | ||
| SI4200BM | New and Original | ||
| SI4200BMR | New and Original | ||
| SI4200DB-BMR | New and Original | ||
| SI4200DY | New and Original | ||
| SI4200GM | New and Original | ||
| SI4200M | New and Original | ||
| SI4200S | New and Original | ||
| SI4201-BMR | New and Original | ||
| SI417DY | New and Original | ||
| SI4190 | New and Original | ||
| SI4200-BMR | New and Original | ||
| SI4200-GMR | New and Original | ||
| SI4200DB-BM | New and Original | ||
| SI4200DY-T1 | New and Original | ||
| SI4200DY-T1-E3 | New and Original | ||
| SI4201 | New and Original |