 | |  | |
| PartNumber | SI4410DYTRPBF | SI4410DYPBF | SI4410DY |
| Description | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | MOSFET N-CH 30V 10A 8-SOIC |
| Manufacturer | Infineon | Infineon | NXP |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 10 A | 10 A | - |
| Rds On Drain Source Resistance | 20 mOhms | 20 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 30 nC | 30 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | - |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | HEXFET Power MOSFET | HEXFET Power MOSFET | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Fall Time | 44 ns | 44 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7.7 ns | 7.7 ns | - |
| Factory Pack Quantity | 4000 | 3800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | 38 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | SP001563088 | SP001563080 | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Forward Transconductance Min | - | 35 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
SI4410DYTRPBF | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | |
| SI4410DY | MOSFET N-CH 30V 10A 8-SOIC | ||
| SI4410DYPBF | MOSFET N-CH 30V 10A 8-SOIC | ||
| SI4410DYTRPBF | MOSFET N-CH 30V 10A 8-SOIC | ||
Infineon / IR |
SI4410DYPBF | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | |
| SI4410DYTRPBF-CUT TAPE | New and Original | ||
| SI4410DX | New and Original | ||
| SI4410DY+118 | New and Original | ||
| SI4410DY-NL | New and Original | ||
| SI4410DY-REVA | MOSFET 30V 10A 2.5W | ||
| SI4410DY-T1 | MOSFET Transistor, N-Channel, SO | ||
| SI4410DY-T1--E3 | New and Original | ||
| SI4410DY-T1-A-E3 | MOSFET 30V 10A 2.5W | ||
| SI4410DY-T1-E3 | New and Original | ||
| SI4410DY-T1-E3. | New and Original | ||
| SI4410DY-T1-GE3 | New and Original | ||
| SI4410DY-T1-JIT | New and Original | ||
| SI4410DY-T1-REV/A | New and Original | ||
| SI4410DY-T1-REVA | MOSFET 30V 10A 2.5W | ||
| SI4410DY-T1REVA | New and Original | ||
| SI4410DY-TI | New and Original | ||
| SI4410DY-TI-E3 | New and Original | ||
| SI4410DY-TR | New and Original | ||
| SI4410DY518 | Now Nexperia SI4410DY - Power Field-Effect Transistor, SO8 | ||
| SI4410DYTR | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | ||
| SI4410DYTRPB | New and Original | ||
NXP Semiconductors |
SI4410DY,518 | MOSFET N-CH 30V SOT96-1 |