 |  | | |
| PartNumber | SI4435DDY-T1-E3 | SI4435DDY-T1-E | SI4435DDY-T1-E3 SOP8 |
| Description | MOSFET -30V Vds 20V Vgs SO-8 | ||
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | - |
| Series | SI4 | SI4435DDY | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4435DDY-E3 | - | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | - |
| Part Aliases | - | SI4435DDY-E3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SOIC-Narrow-8 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 P-Channel | - |
| Pd Power Dissipation | - | 2.5 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 12 ns 16 ns | - |
| Rise Time | - | 8 ns 35 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8.1 A | - |
| Vds Drain Source Breakdown Voltage | - | - 30 V | - |
| Rds On Drain Source Resistance | - | 24 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 45 ns 40 ns | - |
| Typical Turn On Delay Time | - | 10 ns 42 ns | - |
| Channel Mode | - | Enhancement | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4435DDY-T1-E3 | MOSFET -30V Vds 20V Vgs SO-8 | |
| SI4435DDY-T1-E3-CUT TAPE | New and Original | ||
| SI4435DDY-T1-E | New and Original | ||
| SI4435DDY-T1-E3 SOP8 | New and Original | ||
| SI4435DDY-T1-E3. | P-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO | ||
Vishay |
SI4435DDY-T1-E3 | MOSFET P-CH 30V 11.4A 8SOIC |