SI4670DY-T1-E

SI4670DY-T1-E3 vs SI4670DY-T1-E3-S vs SI4670DY-T1-E3..

 
PartNumberSI4670DY-T1-E3SI4670DY-T1-E3-SSI4670DY-T1-E3..
DescriptionMOSFET 25V Vds 16V Vgs SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance23 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.8 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI4--
Transistor Type2 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min23 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time50 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSI4670DY-E3--
Unit Weight0.006596 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4670DY-T1-E3 MOSFET 25V Vds 16V Vgs SO-8
Vishay
Vishay
SI4670DY-T1-E3 RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
SI4670DY-T1-E3-S New and Original
SI4670DY-T1-E3.. New and Original
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