![]() | ![]() | ||
| PartNumber | SI4830CDY-T1-E3 | SI4830CDY | SI4830CDY-T1 |
| Description | RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V | ||
| Manufacturer | Vishay Siliconix | - | - |
| Product Category | IC Chips | - | - |
| Series | LITTLE FOOTR | - | - |
| Packaging | Tape & Reel (TR) | - | - |
| Part Aliases | SI4830CDY-E3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | 8-SO | - | - |
| Configuration | Dual with Schottky Diode | - | - |
| FET Type | 2 N-Channel (Half Bridge) | - | - |
| Power Max | 2.9W | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Drain to Source Voltage Vdss | 30V | - | - |
| Input Capacitance Ciss Vds | 950pF @ 15V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 8A | - | - |
| Rds On Max Id Vgs | 20 mOhm @ 8A, 10V | - | - |
| Vgs th Max Id | 3V @ 1mA | - | - |
| Gate Charge Qg Vgs | 25nC @ 10V | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 12 ns | - | - |
| Rise Time | 12 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5.7 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 20 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 18 ns 18 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Channel Mode | Enhancement | - | - |