| PartNumber | SI5411EDU-T1-GE3 | SI5410DU-T1-GE3 | SI5414DC-T1-GE3 |
| Description | MOSFET RECOMMENDED ALT 781-SI5419DU-GE3 | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 | MOSFET 20V 6.0A 6.3W 17mohm @ 4.5V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-ChipFET-8 | PowerPAK-ChipFET-8 | ChipFET-8 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 25 A | - | - |
| Rds On Drain Source Resistance | 6.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 105 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 31 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 0.75 mm | 0.75 mm | 1.1 mm |
| Length | 3 mm | 3 mm | 3.05 mm |
| Series | SI54 | SI54 | SI5 |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.8 mm | 1.8 mm | 1.65 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 45 S | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | - | SI5410DU-GE3 | SI5414DC-GE3 |
| Unit Weight | - | - | 0.002998 oz |