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| PartNumber | SI6913DQ-T1-E3 | SI6913DQ-T1-GE3 | SI6913DQ |
| Description | MOSFET -12V Vds 8V Vgs TSSOP-8 | MOSFET -12V Vds 8V Vgs TSSOP-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSSOP-8 | TSSOP-8 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.2 mm | - | - |
| Length | 4.4 mm | - | - |
| Series | SI6 | SI6 | - |
| Width | 3 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI6913DQ-T1 | SI6913DQ-GE3 | - |
| Unit Weight | 0.005573 oz | 0.005573 oz | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 5.8 A | - |
| Rds On Drain Source Resistance | - | 21 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Qg Gate Charge | - | 28 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1.14 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 2 P-Channel | - |
| Forward Transconductance Min | - | 25 S | - |
| Fall Time | - | 80 ns | - |
| Rise Time | - | 80 ns | - |
| Typical Turn Off Delay Time | - | 130 ns | - |
| Typical Turn On Delay Time | - | 45 ns | - |