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| PartNumber | SI7629DN-T1-GE3 | SI7629DN-T1-GE3-CUT TAPE | SI7629DN-T1 |
| Description | MOSFET 20V 35A 52W | ||
| Manufacturer | Vishay | - | Vishay Siliconix |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 3.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 177 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 52 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SI7 | - | TrenchFETR |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 64 S | - | - |
| Fall Time | 28 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 38 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Part # Aliases | SI7629DN-GE3 | - | - |
| Part Aliases | - | - | SI7629DN-GE3 |
| Package Case | - | - | PowerPAKR 1212-8 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PowerPAKR 1212-8 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 52W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 5790pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 35A (Tc) |
| Rds On Max Id Vgs | - | - | 4.6 mOhm @ 20A, 10V |
| Vgs th Max Id | - | - | 1.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 177nC @ 10V |
| Pd Power Dissipation | - | - | 52 W |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | - 35 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 1.5 V |
| Rds On Drain Source Resistance | - | - | 3.8 mOhms |
| Qg Gate Charge | - | - | 118 nC |
| Forward Transconductance Min | - | - | 64 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7629DN-T1-GE3 | MOSFET 20V 35A 52W | |
| SI7629DN-T1-GE3-CUT TAPE | New and Original | ||
| SI7629DN-T1 | New and Original | ||
| SI7629DNT1GE3 | Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Vishay |
SI7629DN-T1-GE3 | MOSFET P-CH 20V 35A 1212-8 PPAK |