 |  | | |
| PartNumber | SI7913DN-T1-E3 | SI7913DN-T1 | SI7913DN-T1-G3E |
| Description | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 7.4 A | - | - |
| Rds On Drain Source Resistance | 37 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 24 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SI7 | TrenchFETR | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 150 ns | 70 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 70 ns | 70 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 72 ns | 72 ns | - |
| Typical Turn On Delay Time | 20 ns | 20 ns | - |
| Part # Aliases | SI7913DN-E3 | - | - |
| Part Aliases | - | SI7913DN-E3 | - |
| Package Case | - | PowerPAKR 1212-8 Dual | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR 1212-8 Dual | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 1.3W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 5A | - |
| Rds On Max Id Vgs | - | 37 mOhm @ 7.4A, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 24nC @ 4.5V | - |
| Pd Power Dissipation | - | 1.3 W | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 5 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 37 mOhms | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7913DN-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 | |
| SI7913DN-T1-E3 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 | ||
| SI7913DN-T1-GE3-CUT TAPE | New and Original | ||
| SI7913DN-T1 | New and Original | ||
| SI7913DN-T1-G3E | New and Original | ||
Vishay |
SI7913DN-T1-E3 | MOSFET 2P-CH 20V 5A 1212-8 | |
| SI7913DN-T1-GE3 | MOSFET 2P-CH 20V 5A PPAK 1212-8 |