 | | ||
| PartNumber | SI7972DP-T1-GE3 | SI7970DP-E3 | SI7970DP-T1-E3 |
| Description | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | MOSFET 40V 10.2A 3.5W 19mohm @ 10V | |
| Manufacturer | Vishay | - | VISHAY |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 18 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 22 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | SI7 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 38 S | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 80 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7972DP-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | |
| SI7973DP-T1-GE3 | MOSFET 12V 12.8A 3.5W 15mohm @ 4.5V | ||
| SI7973DP-T1-E3 | MOSFET 12V 12.8A 1.4W | ||
| SI7973DP-T1-E3 | RF Bipolar Transistors MOSFET 12V 12.8A 1.4W | ||
| SI7973DP-T1-GE3 | RF Bipolar Transistors MOSFET 12V 12.8A 3.5W 15mohm @ 4.5V | ||
| SI7970DP-E3 | New and Original | ||
| SI7970DP-T1-E3 | MOSFET 40V 10.2A 3.5W 19mohm @ 10V | ||
Vishay |
SI7972DP-T1-GE3 | MOSFET 2 N-CH 30V POWERPAK SO8 |