 | | | |
| PartNumber | SIA431DJ | SIA431DJ- | SIA431DJ-T1 |
| Description | |||
| Manufacturer | VISHAY | - | VISHAY |
| Product Category | FETs - Single | - | FETs - Single |
| Series | SIA4xxDJ | - | SIA4xxDJ |
| Packaging | Reel | - | Reel |
| Part Aliases | SIA431DJ-GE3 | - | SIA431DJ-GE3 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | PowerPAK-SC-70-6 | - | PowerPAK-SC-70-6 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Pd Power Dissipation | 19 W | - | 19 W |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 25 ns | - | 25 ns |
| Rise Time | 25 ns | - | 25 ns |
| Vgs Gate Source Voltage | +/- 8 V | - | +/- 8 V |
| Id Continuous Drain Current | - 12 A | - | - 12 A |
| Vds Drain Source Breakdown Voltage | - 20 V | - | - 20 V |
| Vgs th Gate Source Threshold Voltage | - 0.85 V | - | - 0.85 V |
| Rds On Drain Source Resistance | 70 mOhms | - | 70 mOhms |
| Transistor Polarity | P-Channel | - | P-Channel |
| Typical Turn Off Delay Time | 65 ns | - | 65 ns |
| Typical Turn On Delay Time | 22 ns | - | 22 ns |
| Qg Gate Charge | 60 nC | - | 60 nC |
| Forward Transconductance Min | 31 S | - | 31 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| SIA431DJ | New and Original | ||
| SIA431DJ- | New and Original | ||
| SIA431DJ-T1 | New and Original | ||
| SIA431DJ-TI-GE3 | New and Original | ||
| SIA431DJT1GE3 | Power Field-Effect Transistor, 9.6A I(D), 20V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Vishay |
SIA431DJ-T1-GE3 | MOSFET P-CH 20V 12A PPAK SC70-6 |