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| PartNumber | SIA433EDJ-T1-GE3-CUT TAPE | SIA433EDJ | SIA433EDJ-T1-GE3 |
| Description | MOSFET P-CH 20V 12A SC-70-6 | ||
| Manufacturer | - | - | Vishay Siliconix |
| Product Category | - | - | FETs - Single |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SIA433EDJ-GE3 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | PowerPAKR SC-70-6 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | PowerPAKR SC-70-6 Single |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 19W |
| Transistor Type | - | - | 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 12A (Tc) |
| Rds On Max Id Vgs | - | - | 18 mOhm @ 7.6A, 4.5V |
| Vgs th Max Id | - | - | 1.2V @ 250μA |
| Gate Charge Qg Vgs | - | - | 75nC @ 8V |
| Pd Power Dissipation | - | - | 19 W |
| Fall Time | - | - | 3.2 us |
| Rise Time | - | - | 1.7 us |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | - 12 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 1.2 V |
| Rds On Drain Source Resistance | - | - | 18 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 6 us |
| Typical Turn On Delay Time | - | - | 0.71 us |
| Qg Gate Charge | - | - | 50 nC |
| Forward Transconductance Min | - | - | 35 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| SIA433EDJ-T1-GE3-CUT TAPE | New and Original | ||
| SIA433EDJ | New and Original | ||
| SIA433EDJT1GE3 | New and Original | ||
Vishay |
SIA433EDJ-T1-GE3 | MOSFET P-CH 20V 12A SC-70-6 |