SIDR3

SIDR390DP-T1-RE3 vs SIDR392DP-T1-GE3 vs SIDR390DP-T1-GE3

 
PartNumberSIDR390DP-T1-RE3SIDR392DP-T1-GE3SIDR390DP-T1-GE3
DescriptionMOSFET N-Channel 30 V (D-S) MOSFETMOSFET 30V Vds 20V Vgs PowerPAK SO-8DCMOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8DC-8PowerPAK-SO-8DC-8PowerPAK-SO-8DC-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current100 A100 A100 A
Rds On Drain Source Resistance1.15 mOhms620 uOhms1.15 mOhms
Vgs th Gate Source Threshold Voltage2 V1 V800 mV
Vgs Gate Source Voltage4.5 V10 V4.5 V
Qg Gate Charge102 nC125 nC102 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSIDSIDSID
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time27 ns12 ns27 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time63 ns23 ns63 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time78 ns41 ns78 ns
Typical Turn On Delay Time51 ns17 ns51 ns
Pd Power Dissipation-125 W125 W
Transistor Type-1 N-Channel1 N-Channel1 N-Channel
Forward Transconductance Min-125 S-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIDR390DP-T1-RE3 MOSFET N-Channel 30 V (D-S) MOSFET
SIDR392DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
SIDR390DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
Vishay
Vishay
SIDR392DP-T1-GE3 MOSFET N-CHAN 30V
SIDR390DP-T1-GE3 MOSFET N-CHAN 30V POWERPAK SO-8D
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