 |  | | |
| PartNumber | SIHD6N62E-GE3 | SIHD6N62E-GE3-CUT TAPE | SIHD6N62E |
| Description | MOSFET 620V Vds 30V Vgs DPAK (TO-252) | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 620 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 900 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 17 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 78 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Bulk | - | - |
| Series | E | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHD6N62E-GE3 | MOSFET 620V Vds 30V Vgs DPAK (TO-252) | |
Vishay |
SIHD6N62E-GE3 | RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS | |
| SIHD6N62ET1-GE3 | MOSFET N-CH 620V 6A TO252AA | ||
| SIHD6N62E-GE3-CUT TAPE | New and Original | ||
| SIHD6N62E | New and Original |