 | |  | |
| PartNumber | SIHF9630STRL-GE3 | SIHF9630S-GE3 | SIHF9630 |
| Description | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 6.5 A | 6.5 A | - |
| Rds On Drain Source Resistance | 800 mOhms | 800 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 29 nC | 29 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 74 W | 74 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | - | - |
| Series | SIH | SIHF | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 2.8 S | 2.8 S | - |
| Fall Time | 24 ns | 24 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 27 ns | 27 ns | - |
| Factory Pack Quantity | 800 | 1 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 28 ns | 28 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHF9630STRL-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | |
| SIHF9630S-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHF9640S-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHF9630 | New and Original | ||
| SIHF9640STRL-GE3 | New and Original |