PartNumber | SIHG64N65E-GE3 | SIHG61N65EF-GE3 | SIHG47N65E-GE3 |
Description | MOSFET 650V Vds 30V Vgs TO-247AC | MOSFET 650V Vds 30V Vgs TO-247AC | MOSFET 650V Vds 30V Vgs TO-247AC |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | - | 650 V |
Id Continuous Drain Current | 64 A | - | 47 A |
Rds On Drain Source Resistance | 47 mOhms | - | 72 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | - | 4 V |
Vgs Gate Source Voltage | 30 V | - | 30 V |
Qg Gate Charge | 239 nC | - | 182 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 520 W | - | 417 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Series | E | SIH | E |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 103 ns | - | 103 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 122 ns | - | 87 ns |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 213 ns | - | 156 ns |
Typical Turn On Delay Time | 66 ns | - | 47 ns |
Unit Weight | 0.211644 oz | - | 1.340411 oz |
Packaging | - | Tube | Bulk |
Height | - | - | 20.82 mm |
Length | - | - | 15.87 mm |
Width | - | - | 5.31 mm |