 |  | | |
| PartNumber | SIHG21N60EF-GE3 | SIHG21N80AE-GE3 | SIHG21N65EF-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET E Series Power MOSFET | MOSFET 650V Vds 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247-3 | TO-247AC-3 |
| Packaging | Reel | Tube | Tube |
| Height | 20.82 mm | - | 20.82 mm |
| Length | 15.87 mm | - | 15.87 mm |
| Series | EF | E | EF |
| Width | 5.31 mm | - | 5.31 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 500 | 50 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 800 V | - |
| Id Continuous Drain Current | - | 17.4 A | - |
| Rds On Drain Source Resistance | - | 235 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 48 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 32 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 76 ns | - |
| Rise Time | - | 38 ns | - |
| Typical Turn Off Delay Time | - | 71 ns | - |
| Typical Turn On Delay Time | - | 21 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG21N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | |
| SIHG21N80AE-GE3 | MOSFET E Series Power MOSFET | ||
| SIHG21N65EF-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
Vishay |
SIHG21N65EF-GE3 | MOSFET N-CH 650V 21A TO-247AC | |
| SIHG21N60EF-GE3 | MOSFET N-CH 600V 21A TO-247AC |