| PartNumber | SIHG22N60E-E3 | SIHG22N60E-GE3 | SIHG22N60EF-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 21 A | 21 A | 19 A |
| Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | 182 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 2 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 57 nC | 57 nC | 96 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 227 W | 227 W | 179 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Series | E | E | EF |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 35 ns | 35 ns | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 27 ns | 21 ns |
| Factory Pack Quantity | 500 | 500 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 66 ns | 66 ns | 58 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns | 15 ns |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Height | - | 20.82 mm | - |
| Length | - | 15.87 mm | - |
| Width | - | 5.31 mm | - |
| Transistor Type | - | - | 1 N-Channel |
| Forward Transconductance Min | - | - | 5.8 S |