SIHH14N65

SIHH14N65E-T1-GE3 vs SIHH14N65EF-T1-GE3 vs SIHH14N65EF

 
PartNumberSIHH14N65E-T1-GE3SIHH14N65EF-T1-GE3SIHH14N65EF
DescriptionMOSFET 650V Vds 30V Vgs PowerPAK 8 x 8MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-8x8-4PowerPAK-8x8-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current15 A15 A-
Rds On Drain Source Resistance225 mOhms225 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge48 nC48 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation156 W156 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1 mm1 mm-
Length8 mm8 mm-
SeriesEFEF-
Width8 mm8 mm-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time31 ns31 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time53 ns53 ns-
Typical Turn On Delay Time22 ns22 ns-
Unit Weight0.001764 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHH14N65E-T1-GE3 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
SIHH14N65EF-T1-GE3 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
SIHH14N65EF New and Original
SIHH14N65ET1GE3 Power Field-Effect Transistor, 15A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay
Vishay
SIHH14N65EF-T1-GE3 MOSFET N-CHAN 650V 15A POWERPAK
SIHH14N65E-T1-GE3 Trans MOSFET N-CH 650V 15A 4-Pin PowerPAK EP T/R
Top