SIHP12N6 stock, SIHP12N6, SIHP12N60E-E3


PartNumber	SIHP12N60E-E3	SIHP12N60E-GE3	SIHP12N65E-GE3
Description	MOSFET 600V Vds 30V Vgs TO-220AB	MOSFET 600V Vds 30V Vgs TO-220AB	MOSFET 650V Vds 30V Vgs TO-220AB
Manufacturer	Vishay	Vishay	Vishay
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220AB-3	TO-220AB-3	TO-220AB-3
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V	650 V
Id Continuous Drain Current	12 A	12 A	12 A
Rds On Drain Source Resistance	380 mOhms	380 mOhms	380 mOhms
Vgs th Gate Source Threshold Voltage	4 V	4 V	4 V
Vgs Gate Source Voltage	30 V	30 V	30 V
Qg Gate Charge	29 nC	29 nC	35 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	147 W	147 W	156 W
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Height	15.49 mm	-	-
Length	10.41 mm	-	-
Series	E	E	E
Width	4.7 mm	-	-
Brand	Vishay / Siliconix	Vishay / Siliconix	Vishay / Siliconix
Fall Time	19 ns	19 ns	18 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	19 ns	19 ns	19 ns
Factory Pack Quantity	50	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	35 ns	35 ns	35 ns
Typical Turn On Delay Time	14 ns	14 ns	16 ns
Unit Weight	0.211644 oz	0.211644 oz	0.211644 oz

Search Part Number : "SIHP12N6", Match & Start with "SIHP12N6" - Total : 8

Manufacturer	Part #	Description
Vishay / Siliconix	SIHP12N60E-E3	MOSFET 600V Vds 30V Vgs TO-220AB
	SIHP12N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220AB
	SIHP12N65E-GE3	MOSFET 650V Vds 30V Vgs TO-220AB
Vishay	SIHP12N65E-GE3	IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
	SIHP12N60E-GE3	IGBT Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
	SIHP12N60E-E3	MOSFET N-CH 600V 12A TO220AB
	SIHP12N60E	New and Original
	SIHP12N65E	New and Original

SIHP12N6