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| PartNumber | SIJA52DP-T1-GE3 | SIJA52ADP-T1-GE3 | SIJA52DP |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-5 | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIJ | SIJ | - |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.017870 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 131 A | - |
| Rds On Drain Source Resistance | - | 1.63 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V | - |
| Vgs Gate Source Voltage | - | 20 V, - 16 V | - |
| Qg Gate Charge | - | 100 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 48 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel TrenchFET Power MOSFET | - |
| Forward Transconductance Min | - | 98 S | - |
| Fall Time | - | 6 ns | - |
| Rise Time | - | 6 ns | - |
| Typical Turn Off Delay Time | - | 38 ns | - |
| Typical Turn On Delay Time | - | 17 ns | - |