 |  | | |
| PartNumber | SIR472DP-T1-GE3 | SIR472DP-T1-GE3(R472) | SIR472DP-T1-GE3. |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Series | SIRxxxDP | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SIR472DP-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SO-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 3.9 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 10 ns | - | - |
| Rise Time | 12 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 12.2 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Forward Transconductance Min | 52 S | - | - |
| Channel Mode | Enhancement | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay |
SIR472DP-T1-GE3 | MOSFET N-CH 30V 20A PPAK SO-8 | |
| SIR472DP-T1-GE3(R472) | New and Original | ||
| SIR472DP-T1-GE3. | New and Original |