 |  | | |
| PartNumber | SIRB40DP-T1-GE3 | SIRB24D | SIRB40DP |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 3.25 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | - 16 V, 20 V | - | - |
| Qg Gate Charge | 93 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 46.2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 76 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 96 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 29 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRB40DP-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | |
| SIRB24D | New and Original | ||
| SIRB40DP | New and Original | ||
| SIRB7045-100M | New and Original | ||
| SIRBA | New and Original | ||
| SIRBA S1RBA | New and Original | ||
Vishay |
SIRB40DP-T1-GE3 | MOSFET 2 N-CH 40V POWERPAK SO8 |