| PartNumber | SISH110DN-T1-GE3 | SISH114ADN-T1-GE3 | SISH112DN-T1-GE3 |
| Description | MOSFET 20V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds; +/-20V Vgs PowerPAK 1212-8SH | MOSFET 30V Vds 12V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8SH | PowerPAK-1212-8SH-8 | PowerPAK-1212-8SH |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 30 V | 30 V |
| Id Continuous Drain Current | 21.1 A | 35 A | 17.8 A |
| Rds On Drain Source Resistance | 5.3 mOhms | 7.5 mOhms | 7.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.2 V | 600 mV |
| Vgs Gate Source Voltage | 20 V | 20 V | 12 V |
| Qg Gate Charge | 21 nC | 32 nC | 27 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 50 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.8 W | 39 W | 3.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET; PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIS | - | SIS |
| Transistor Type | 1 N-Channel TrenchFET Power MOSFET | 1 N-Channel | 1 N-Channel TrenchFET Power MOSFET |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 71 S | 50 S | 97 S |
| Fall Time | 10 ns | 7 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 8 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 36 ns | 20 ns | 65 ns |
| Typical Turn On Delay Time | 12 ns | 11 ns | 10 ns |