 | | | |
| PartNumber | SIZ710DT-T1 | SIZ710DT | SIZ710DT-T1-GE |
| Description | |||
| Manufacturer | Vishay Siliconix | VISHAY | - |
| Product Category | FETs - Arrays | FETs - Arrays | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | SIZ710DT-GE3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 6-PowerPair | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | 6-PowerPair | - | - |
| Configuration | Dual | - | - |
| FET Type | 2 N-Channel (Half Bridge) | - | - |
| Power Max | 27W, 48W | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 820pF @ 10V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 16A, 35A | - | - |
| Rds On Max Id Vgs | 6.8 mOhm @ 19A, 10V | - | - |
| Vgs th Max Id | 2.2V @ 250μA | - | - |
| Gate Charge Qg Vgs | 18nC @ 10V | - | - |
| Pd Power Dissipation | 27 W 48 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Vgs Gate Source Voltage | +/- 20 V | - | - |
| Id Continuous Drain Current | 16 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V to 2.2 V | - | - |
| Rds On Drain Source Resistance | 5.5 mOhms 2.7 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Qg Gate Charge | 11.5 nC 38 nC | - | - |
| Forward Transconductance Min | 45 S 85 S | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIZ710DT-T1-GE3 | MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7 | |
| SIZ710DT-T1 | New and Original | ||
| SIZ710DT | New and Original | ||
| SIZ710DT-T1-GE | New and Original | ||
Vishay |
SIZ710DT-T1-GE3 | MOSFET 2N-CH 20V 16A POWERPAIR |