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| PartNumber | SIZ900DT | SIZ900DT-T1-E3 | SIZ900DT-T1-GE3 |
| Description | MOSFET 2N-CH 30V 24A POWERPAIR | ||
| Manufacturer | Vishay Siliconix | - | Vishay Siliconix |
| Product Category | FETs - Arrays | - | FETs - Arrays |
| Series | TrenchFETR | - | TrenchFETR |
| Packaging | Digi-ReelR Alternate Packaging | - | Digi-ReelR Alternate Packaging |
| Part Aliases | SIZ900DT-GE3 | - | SIZ900DT-GE3 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | 6-PowerPair | - | 6-PowerPair |
| Technology | Si | - | Si |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | - | Surface Mount |
| Number of Channels | 2 Channel | - | 2 Channel |
| Supplier Device Package | 6-PowerPair | - | 6-PowerPair |
| Configuration | Dual Common Source | - | Dual Common Source |
| FET Type | 2 N-Channel (Half Bridge) | - | 2 N-Channel (Half Bridge) |
| Power Max | 48W, 100W | - | 48W, 100W |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Drain to Source Voltage Vdss | 30V | - | 30V |
| Input Capacitance Ciss Vds | 1830pF @ 15V | - | 1830pF @ 15V |
| FET Feature | Logic Level Gate | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | 24A, 28A | - | 24A, 28A |
| Rds On Max Id Vgs | 7.2 mOhm @ 19.4A, 10V | - | 7.2 mOhm @ 19.4A, 10V |
| Vgs th Max Id | 2.4V @ 250μA | - | 2.4V @ 250μA |
| Gate Charge Qg Vgs | 45nC @ 10V | - | 45nC @ 10V |
| Pd Power Dissipation | 48 W 100 W | - | 48 W 100 W |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 24 A | - | 24 A |
| Vds Drain Source Breakdown Voltage | 30 V | - | 30 V |
| Rds On Drain Source Resistance | 5.9 mOhms 3.2 mOhms | - | 5.9 mOhms 3.2 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| SIZ900DT | ブランドニューオリジナル | ||
| SIZ900DT-T1-E3 | ブランドニューオリジナル | ||
Vishay |
SIZ900DT-T1-GE3 | MOSFET 2N-CH 30V 24A POWERPAIR |