SMBTA56E

SMBTA56E6327HTSA1 vs SMBTA56E6327 vs SMBTA56E6433

 
PartNumberSMBTA56E6327HTSA1SMBTA56E6327SMBTA56E6433
DescriptionBipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5ASmall Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, SiliconTrans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R - Bulk (Alt: SMBTA56E6433)
ManufacturerInfineon--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.25 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesSMBTA56--
Height1 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandInfineon Technologies--
Continuous Collector Current500 mA--
Pd Power Dissipation330 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases56 E6327 SMBTA SMBTA56E6327XT SP000011692--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
SMBTA56E6327HTSA1 Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A
SMBTA56E6433HTMA1 Bipolar Transistors - BJT AF TRANSISTORS
SMBTA56E6327 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
SMBTA56E6433 Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R - Bulk (Alt: SMBTA56E6433)
Infineon Technologies
Infineon Technologies
SMBTA56E6327HTSA1 TRANS PNP 80V 0.5A SOT-23
SMBTA56E6433HTMA1 TRANS PNP 80V 0.5A SOT-23
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